| abstract |
A method is provided that can ensure proper adhesion of a dielectric layer to a semiconductor structure. Depositing a silicon dioxide adhesion layer on a semiconductor substrate by a first plasma enhanced chemical vapor deposition (PECVD) process and depositing a dielectric layer on the adhesion layer by a second PECVD process. and, the first PECVD process, while introducing the absence or O 2 of the O 2 in the process in the following flow rate 250 sccm, carried out in a gaseous atmosphere containing tetraethylorthosilicate (TEOS). [Selection] Figure 1 |