http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2022523019-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-505 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-56 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02219 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76837 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-345 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45536 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-045 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0234 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02348 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-452 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-42 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-318 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31 |
| filingDate | 2019-11-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2022-04-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2022523019-A |
| titleOfInvention | How to deposit silicon nitride |
| abstract | The embodiments described and discussed herein are methods of depositing silicon nitride materials by vapor phase deposition, such as fluid chemical vapor deposition (FCVD), as well as new silicon-nitrogen precursors for such deposition processes. Provide a way to utilize the body. The silicon nitride material is deposited on the substrate for gap filling applications such as filling trenches formed on the substrate surface. In one or more embodiments, the method of depositing a silicon nitride film is to introduce one or more silicon-nitrogen precursors and one or more plasma-excited co-reactants into the processing chamber, within the processing chamber. It involves generating a plasma and reacting a silicon-nitrogen precursor with a plasma excited co-reactive material in the plasma to form a fluid silicon nitride material on a substrate in a processing chamber. The method also includes processing a fluid silicon nitride material to produce a solid silicon nitride material on a substrate. [Selection diagram] Fig. 1 |
| priorityDate | 2019-01-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 47.