Predicate |
Object |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-345 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45523 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-505 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-56 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02222 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-045 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-452 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07F7-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02219 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-42 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-56 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-318 |
filingDate |
2018-07-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate |
2020-08-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
JP-2020526663-A |
titleOfInvention |
Silicon nitride film with high nitrogen content |
abstract |
A method for depositing a silicon nitride film having a high nitrogen content is described. Some methods involve exposing the substrate to a silicon-nitrogen precursor and ammonia plasma to form a fluid polymer, which is then cured to form a silicon nitride film. Some methods cure this fluid polymer without the use of an ultraviolet (UV) curing process. Membranes produced by the method are also described. [Selection diagram] FIG. 2B |
priorityDate |
2017-07-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |