| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67766
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67742 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32135
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F1-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02315
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02244
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31122
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30604 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate |
2018-02-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2020-02-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2020505780-A |
| titleOfInvention |
Self-controlling atomic thermal etching system and method |
| abstract |
A system and method for etching a semiconductor substrate may include flowing an oxygen-containing precursor into a substrate processing region of a semiconductor processing chamber. The substrate processing region contains a semiconductor substrate, which may include an exposed metal-containing material. The method may include flowing a nitrogen-containing precursor into the substrate processing region. The method may further include removing an amount of the metal-containing material. [Selection diagram] FIG. |
| priorityDate |
2017-02-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |