http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014192245-A

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http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32136
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filingDate 2013-03-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1e1d5039e04b2da3fbe514f149d01d19
publicationDate 2014-10-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2014192245-A
titleOfInvention Plasma processing method and plasma processing apparatus
abstract In a plasma processing method, lateral etching of a tungsten layer is suppressed. A first etching step of supplying a processing gas containing a fluorine-containing gas to a processing container 12 and generating plasma to etch a tungsten layer W from the upper surface of the tungsten layer W to before reaching the lower surface of the tungsten layer. S2 and a processing gas containing an oxygen-containing gas are supplied to the processing container 12, and plasma is generated to process the tungsten layer W. A processing gas containing a fluorine-containing gas is supplied to the processing container 12. And a second etching step S4 for generating plasma and etching the tungsten layer W up to the lower surface of the tungsten layer W. [Selection] Figure 2
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102332767-B1
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2020505780-A
priorityDate 2013-03-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 33.