| abstract |
PROBLEM TO BE SOLVED: To form a Si segregation layer for protecting a SiGe channel without damaging the SiGe channel in a manufacturing process of a semiconductor device having the SiGe channel. SOLUTION: A first step of subjecting a semiconductor substrate having at least a silicon layer and a silicon germanium layer formed on the silicon layer to plasma treatment under the first condition to expose the silicon germanium layer, and a first step on the semiconductor substrate. In the method for manufacturing a semiconductor device having a second step of segregating silicon on the surface of an exposed silicon germanium layer by subjecting plasma treatment under the condition of 2, the first condition is a silicon germanium layer or a silicon germanium layer. Adjacent layers can be etched, the second condition is a condition for performing hydrogen plasma treatment, and the first step and the second step are continuous in the treatment chamber of the same plasma treatment device. Will be done. [Selection diagram] FIG. 9 |