| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-775
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66439
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0673 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32135
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02381
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-322
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32357
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30604
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30608
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32724 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate |
2017-03-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2019-03-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2019507505-A |
| titleOfInvention |
Etching with adjustable selectivity of isotropic silicon and silicon germanium |
| abstract |
An etch with adjustable selectivity of isotropic silicon and silicon germanium is described. The method includes receiving a substrate having a layer of silicon and a layer of silicon germanium, wherein the sidewall surfaces of the silicon and silicon germanium are not covered, and in a processing chamber configured to etch the substrate. Placing a substrate and modifying the uncovered surface of silicon and silicon germanium by exposing the uncovered surface of silicon and silicon germanium to radical species. The method includes flowing a mixture of a nitrogen-containing gas and a fluorine-containing gas at a first substrate temperature to form a fluorinated byproduct, followed by a fluorine at a second substrate temperature that is higher than the first substrate temperature. Performing a gaseous chemical oxide removal process comprising performing a sublimation process to remove chemical byproducts, and controlling the second substrate temperature to provide a silicon oxide material to silicon germanium oxide material. And further adjusting the sublimation rate and etching selectivity. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2020170835-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7360979-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2021506141-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2021085158-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7089656-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7257543-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7320135-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2022264380-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2021187163-A1 |
| priorityDate |
2016-03-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |