| abstract |
An object of the present invention is to provide a semiconductor device having an electrode including an electroless Ni plating layer and having less occurrence of cracks in the electroless Ni plating layer and having high reliability. The semiconductor device includes a semiconductor element and a first electrode formed on a first surface of the semiconductor element. The first electrode has a laminated structure including a first electroless Ni plating layer. The first electroless Ni plating layer contains Ni (nickel) and P (phosphorus) as a composition, and the first electroless Ni plating layer has a composition. The P (phosphorus) concentration is not less than 2.5 wt% and not more than 6 wt%, and the crystallization ratio of Ni 3 P in the first electroless Ni plating layer is not less than 0% and not more than 20%. . [Selection diagram] Fig. 1 |