| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5d7576285d411d00c697e07270d2814a |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76874 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-288
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-1837
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32136
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02068
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7397
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7685
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-417
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66348 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-739
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-288
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-417 |
| filingDate |
2015-09-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a5fc24279c87278f558105050c0bb310
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4fec667562b55341a950313d9425fe66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b8c811f1515f0a56e1e89ec236a2c955 |
| publicationDate |
2017-03-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2017059636-A |
| titleOfInvention |
Manufacturing method of semiconductor device |
| abstract |
A method of manufacturing a semiconductor device capable of suppressing wafer warpage, reducing manufacturing costs, and obtaining a highly conductive Ni film is provided. A first main electrode is formed on a first main surface of a semiconductor substrate having first and second main surfaces facing each other. A second main electrode 13 is formed on the second main surface of the semiconductor substrate 1. A surface activation process for activating the surfaces of the first and second main electrodes 9 and 13 is performed. A surface cleaning process for cleaning the surfaces of the first and second main electrodes 9 and 13 is performed. After the surface activation treatment and the surface cleaning treatment, the first and second Ni films 14 and 15 containing 2% or more of crystalline Ni are respectively formed on the first and second main electrodes 9 and 13 by wet deposition. Form simultaneously by the method. [Selection] Figure 6 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2020035812-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2022186192-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7075847-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2019021656-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7005356-B2 |
| priorityDate |
2015-09-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |