| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5d7576285d411d00c697e07270d2814a |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-73221
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-84801
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-73265
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-13055
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-1305
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-84
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-351
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-00014
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-83801
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-4846 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-34 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-288
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-739
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C18-31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-41 |
| filingDate |
2009-03-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_73d28b56358f4d175dd4c90c2a6ee756
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4fec667562b55341a950313d9425fe66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cb565dbc23ef28a4d842c71f4b512330
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1dde3b6866def77defe47d4c362de250 |
| publicationDate |
2010-09-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2010205991-A |
| titleOfInvention |
Semiconductor device and manufacturing method thereof |
| abstract |
The present invention provides a semiconductor device and a semiconductor device manufacturing method capable of reducing the amount of warpage of a semiconductor wafer in a film forming process, and reducing transport mistakes and wafer cracks. A method of manufacturing a semiconductor device includes a step of preparing a substrate 1 having a first surface 1a and a second surface 1b facing each other, and a first layer 1a and a second surface 1b of the substrate 1 having a conductive layer by plating Forming a plating film 7 and an Au plating film 8. [Selection] Figure 5 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9779951-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017137523-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2020035812-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2021229728-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10340227-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013087298-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7075847-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102015104570-B4
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102015104570-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013194291-A |
| priorityDate |
2009-03-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |