| abstract |
Power chip (300) comprising: a chip body (310); anda front metallization structure (350) on a front side of the chip body and a backside metallization structure (360) on a back side of the chip body such that the power chip (300) has a positive radius of curvature in a temperature range of a die attach process; wherein the backside metallization structure (360) neutralizing ions and gas atoms as impurities, the trapped impurities imparting stress in the backside metallization structure (360), whereby during the die attach process the backside metallization structure (360) exerts a compressive stress on the chip body (310) that is stronger than the compressive stress, which is applied to the chip body (310) by the front metallization structure (350) during the die attach process. |