| abstract |
An object of the present invention is to provide a technique for suppressing the generation of particles in order to achieve miniaturization with high integration in pattern formation on a processing substrate. A method according to one embodiment is a film forming method for forming a film on a pattern formed on a substrate to be processed, wherein the substrate to be processed is provided in a space that can be plasma processed in a reduced pressure environment. An upper electrode, which is disposed on the pedestal and faces the pedestal and is capable of supplying high frequency power, is disposed in the space. The method includes a first step of forming a deposited film on a pattern of a substrate to be processed, and a second step of cleaning the space by supplying power only to the upper electrode to generate plasma in the space. Execute the prepared sequence repeatedly. [Selected figure] Figure 1 |