| abstract |
The present invention provides a film forming method capable of performing annealing treatment by shortening the time for which the temperature of a substrate reaches a target temperature to improve productivity. SOLUTION: A rotary table 2 which can be moved up and down, a heater unit 7 below the rotary table, a first processing region P1 having a first gas supply unit, and a second processing having a second gas supply unit A film forming method for forming a film on a plurality of substrates using a film forming apparatus including a region P2 and a separation region D having a separation gas supply unit, the first gas in a state where the rotation table is elevated. A film forming process performed by supplying the first reaction gas from the supply unit, the second reaction gas from the second gas supply unit, and the separation gas from the separation gas supply unit, and at least before or after the film formation process. With the rotary table lowered, the separated gas or the second reaction gas from the first gas supply unit, the separated gas or the second reaction gas from the second gas supply unit, and the separated gas from the separated gas supply unit It includes an annealing process performed by supplying. [Selected figure] Figure 6 |