| abstract |
An object of the present invention is to provide a film forming method capable of stably generating oxygen plasma without using a hydrogen-containing gas and forming a silicon oxide film with good in-plane uniformity. To do. A film forming method for forming a silicon oxide film on a surface of a substrate on which a depression pattern is formed, comprising: Adsorbing aminosilane gas on the surface of the substrate including the recess pattern; An oxidizing gas is supplied onto the surface of the substrate including the recess pattern, and the aminosilane gas adsorbed on the surface of the substrate is oxidized to deposit a silicon oxide film layer on the surface of the substrate including the recess pattern. Process, And a step of modifying the silicon oxide film layer by supplying the silicon oxide film layer with a gas mixture containing oxygen, argon and nitrogen activated by plasma. [Selection] Figure 10 |