| abstract |
A semiconductor device substrate, particularly a semiconductor device substrate having a metal wiring on its surface, is used in a cleaning process after the CMP process and has sufficient anticorrosive properties against metal wiring, generation of residue and residue on the substrate surface. Provided is a cleaning liquid capable of suppressing the adhesion of water. A substrate cleaning solution for a semiconductor device having a pH of 8 or more and 14 or less, comprising the following component (A), component (B) and component (C). (A) chelating agent, (B) compound represented by the following general formula (1), NH 2 —R—NH 2 (1), (the linking group R is a fat represented by the following general formula (2) Group hydrocarbon group),-(CX 1 X 2 ) n- (2), (n is an integer of 3 or more and 6 or less. X 1 and X 2 are each independently a hydrogen atom or an alkyl group. N CX 1 X 2 may be the same or different from each other.), (C) water. [Selection] Figure 1 |