| abstract |
To solve a problem peculiar to a cleaning composition containing a specific cleaning agent adjusted to be substantially neutral, to prevent corrosion of a metal layer of a semiconductor substrate, particularly titanium nitride, and in its manufacturing process Provided are a cleaning composition capable of sufficiently removing the generated plasma etching residue and ashing residue, a cleaning method using the same, and a semiconductor device manufacturing method. A semiconductor substrate containing a water, a cleaning agent, a basic organic compound, an acidic organic compound, and a specific nitrogen-containing aromatic cyclic compound and adjusted to be substantially neutral is provided. Cleaning composition. [Selection figure] None |