| abstract |
A semiconductor device that can be miniaturized or highly integrated is provided. A first insulator disposed on a substrate, an oxide disposed on the first insulator, a second insulator disposed on the oxide, and a second insulator A first conductor disposed on the insulator, a third insulator disposed on the first conductor, a side surface of the second insulator, a side surface of the first conductor, and A fourth insulator disposed in contact with the side surface of the third insulator; a fifth insulator disposed in contact with the upper surface of the oxide and in contact with the side surface of the fourth insulator; And a second conductor in contact with the fifth insulator, and the height of the upper surface of the fourth insulator is higher than the height of the upper surface of the fifth insulator. [Selection] Figure 1 |