http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2020254904-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4236 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4238 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-24 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66742 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7828 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate | 2020-06-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_15fb7b20fc51425279d5b8a752d4195e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_681a96f1b10b420729173b057735eccb |
| publicationDate | 2020-12-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | WO-2020254904-A1 |
| titleOfInvention | Semiconductor device and method for producing semiconductor device |
| abstract | The present invention provides a semiconductor device for high power applications. A semiconductor device which is provided with: a substrate; a first conductive body on the substrate; a first metal oxide on the first conductive body; a first oxide on the first metal oxide; a second oxide on the first oxide; a first insulating body on the second oxide; a second conductive body on the first insulating body; a second insulating body on the second conductive body; a third insulating body that is in contact with the lateral surface of the second conductive body, the lateral surface of the first insulating body and the lateral surface of the second insulating body; a second metal oxide that is arranged on the second oxide, the second insulating body and the third insulating body; and a third conductive body on the second metal oxide. The second conductive body has a region that overlaps with the second oxide; the third conductive body has a region that is in contact with the second metal oxide; the second metal oxide has a region that is in contact with the second oxide; and the carrier concentration of the second oxide is lower than the carrier concentration of the first oxide. |
| priorityDate | 2019-06-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 53.