| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-546
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-547
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-02366
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0682
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-02168
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-022441
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1872
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0392
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1864
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-035272
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1876
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-182 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-266
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-068
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 |
| filingDate |
2014-12-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2017-02-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2017504950-A |
| titleOfInvention |
Solar cell emitter region fabrication using ion implantation. |
| abstract |
A method of manufacturing a solar cell emitter region using ion implantation and the resulting solar cell are described. In one example, a method for manufacturing alternating N-type and P-type emitter regions of a solar cell includes forming a silicon layer on a substrate. A dopant impurity atom of the first conductivity type is implanted into the silicon layer through the first shadow mask to form a first implanted region, resulting in a non-implanted region of the silicon layer. A dopant impurity atom of the second opposite conductivity type is implanted into a part of the non-implanted region of the silicon layer through the second shadow mask to form a second implanted region, and the residual non-implanted silicon layer A region arises. The remaining non-implanted region of the silicon layer is removed by a selective etching process while the first and second implanted regions of the silicon layer are annealed to form a doped polycrystalline silicon emitter region. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2019110185-A |
| priorityDate |
2013-12-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |