http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009035780-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7d45e925a64fa5bb82567b3c49fe9a42 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-203 |
| filingDate | 2007-08-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_725547ad84f855ba66ba3688d1f77ff5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2cc5786f1c7754672fea346be5458dd5 |
| publicationDate | 2009-02-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2009035780-A |
| titleOfInvention | Method and apparatus for producing hydrogenated amorphous silicon |
| abstract | A high quality hydrogenated amorphous silicon film manufacturing technique is provided. An evaporation source 3 is irradiated and swept with an electron beam emitted from an electron gun 4 to melt the evaporation source 3. As a result, silicon as the deposition source 3 evaporates, and a silicon film is deposited on the surface of the substrate 10. The deposition rate of the silicon film is measured by the film thickness monitor 7, and the output of the electron gun 4 is controlled so as to obtain a substantially constant vapor deposition rate based on a signal from the film thickness monitor 7 to the electron gun 4. The deposition rate of the silicon film is preferably 0.02 to 1 nm / s, and more preferably 0.05 to 0.5 nm / s. Further, when silicon is deposited on the substrate 10, in order to form a hydrogenated amorphous silicon film on the substrate 10, an ion beam containing hydrogen ions is irradiated simultaneously with the deposition of the silicon film by an ion beam assisted deposition method. [Selection] Figure 1 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017504950-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2010095639-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2022124030-A1 |
| priorityDate | 2007-08-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 25.