| abstract |
A resist underlayer film forming method capable of forming a resist underlayer film having excellent etching resistance is provided. The present invention relates to a coating process in which a composition for forming a resist underlayer film is applied to a substrate, and the obtained coating film is subjected to a temperature of 450 ° C. to 800 ° C. in an atmosphere having an oxygen concentration of less than 1% by volume. A method of forming a resist underlayer film, wherein the composition for forming a resist underlayer film comprises a compound having an aromatic ring. The oxygen concentration is preferably 0.1% by volume or less. It is preferable that the said temperature is 500 degreeC or more and 600 degrees C or less. The compound having an aromatic ring is preferably a resin having an aromatic ring in the main chain, an aromatic ring-containing compound having a molecular weight of 600 to 3,000, or a combination thereof. The resin having an aromatic ring in the main chain is preferably a polycondensation compound. [Selection figure] None |