| abstract |
An object of the present invention is to provide a semiconductor device in which oxygen is prevented from being released from the side surface of an oxide semiconductor layer, defects (oxygen vacancies) in the oxide semiconductor layer are sufficiently small, and leakage current between a source and a drain is suppressed. To do. An oxide semiconductor layer is formed by performing first heat treatment on an oxide semiconductor film and then processing the oxide semiconductor film, and immediately after that, the sidewall of the oxide semiconductor layer is insulative. By covering with oxide and applying the second heat treatment, the side surface of the oxide semiconductor layer is prevented from being exposed to vacuum, and a semiconductor device is manufactured with fewer defects (oxygen vacancies) in the oxide semiconductor layer. To do. The semiconductor device has a TGBC (Top Gate Bottom Contact) structure. [Selection] Figure 5 |