| abstract |
An oxide semiconductor, a sputtering target with high reproducibility of the target composition, and a field effect transistor with large area uniformity and high reproducibility are provided. SOLUTION: In (indium) element, Sn (tin) element, up to 6 atoms, 3A group element, 4A group element, 5A group element, 6A group element, 7A group element, 8 group element and Sn atom An oxide semiconductor containing one or more elements X selected from Group 4B having a small number. [Selection figure] None |