| abstract |
Disclosed is a method for manufacturing a field effect transistor in which variation in transistor characteristics is small in a thin film transistor using an amorphous oxide. A method of manufacturing a field effect transistor in which a source electrode, a drain electrode, an oxide semiconductor layer, an insulating layer, and a gate electrode are formed on a substrate, the insulating film being formed on the oxide semiconductor. After the layer is provided, annealing is performed in an atmosphere containing moisture to increase the electrical conductivity of the oxide semiconductor, and the water vapor pressure in the step of annealing in the atmosphere containing moisture is set at the annealing temperature. A method for producing a field-effect transistor, which is higher than a saturated water vapor pressure in the atmosphere. [Selection] Figure 2 |