| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fdf3b6ced3d7710ec0bc0addb67a1cc9 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02565
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02554 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4908
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-417
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-792
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-788
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-283
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate |
2017-08-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_68ff1032c32c3e4887408bbdc2711187
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a00921d4367904ce65ed86a9ee3a3081 |
| publicationDate |
2018-01-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2018006762-A |
| titleOfInvention |
Semiconductor device |
| abstract |
An object of the present invention is to reduce oxygen vacancies existing in and near an oxide semiconductor film and improve electrical characteristics of a transistor including the oxide semiconductor film. A semiconductor device using a gate electrode having a Gibbs free energy of oxidation reaction higher than that of a gate insulating film. In the region where the gate electrode and the gate insulating film are in contact with each other, oxygen moves from the gate electrode to the gate insulating film because the Gibbs free energy of the oxidation reaction of the gate electrode is higher than that of the gate insulating film. Oxygen vacancies in the oxide semiconductor film and in the vicinity of the oxide semiconductor film can be reduced by being transmitted and supplied to the oxide semiconductor film provided in contact with the gate insulating film. [Selection] Figure 1 |
| priorityDate |
2011-11-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |