http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015177009-A

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027
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filingDate 2014-03-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_31fa4b4b83f38e30c5bbf766f4ce2550
publicationDate 2015-10-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2015177009-A
titleOfInvention Pattern formation method
abstract A pattern forming method having a lithography method capable of forming a desired pattern in a short process is provided. In a pattern forming method according to an embodiment, a neutralization film 16 having affinity for a first polymer and a second polymer is formed on a base region 14, and a neutralization film first is formed. The first region is irradiated with energy rays to form first pinning portions 16d and 16e having affinity for the first polymer, and the first neutralizing film including the first pinning portion is formed on the first neutralization film. A block copolymer film including a polymer and a second polymer is formed, and a predetermined treatment is performed on the block copolymer film to perform microphase separation, whereby the first polymer is formed on the first pinning portion. A pattern having the first and second portions 26a and a third portion 28a formed between the first portion and the second portion and formed of the second polymer is formed. [Selection] Figure 7
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017157590-A
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Total number of triples: 26.