| abstract |
PROBLEM TO BE SOLVED: To provide a film for forming a protective layer capable of preventing cracks in a low dielectric material layer of a semiconductor wafer while suppressing an increase in the number of steps in manufacturing a semiconductor device. A protective layer forming film for forming a protective layer on a bumped wafer on which a low dielectric material layer is formed, wherein a supporting substrate, an adhesive layer, and a thermosetting resin layer are arranged in this order. The melt viscosity of the thermosetting resin layer is 1 × 10 2 Pa · S or more and less than 2 × 10 4 Pa · S, and the shear modulus of the pressure-sensitive adhesive layer is 1 × 10 3 Pa. The film for protective layer formation which exists in the temperature range whose temperature used as the above is 2 * 10 < 6 > Pa or less is 50-120 degreeC. [Selection] Figure 1 |