| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_962adbf7d50e742218f3d536a63df612 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-6834
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-68327
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-68381
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-68377 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B24B41-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D201-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-563
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-304
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-6836
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B23K26-53 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-56
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09D201-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-683
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-78 |
| filingDate |
2019-10-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e1e26b37e9f452db64faa5f4b6b3a555
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b7d5c8afa31f7d9cb36d5ef24349c3cd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_acae31c95f364755fef427298b3c461d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5040f708f83a5298a98d1e2404a548e7 |
| publicationDate |
2021-06-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20210075965-A |
| titleOfInvention |
Method of manufacturing a semiconductor device |
| abstract |
To provide a method of manufacturing a semiconductor device capable of achieving both thinning of the semiconductor wafer and suppression of warpage of the semiconductor wafer while protecting the bump neck of the semiconductor wafer having bumps with a protective film formed from the curable resin layer made it a task. And it was set as the manufacturing method of the semiconductor device which includes the following processes (A)-(E) in this order. (A) The step of forming a curable resin layer on the bump formation surface of the semiconductor wafer having bumps (B) The step of curing the curable resin layer to form a protective film (C) The above steps of the semiconductor wafer having the bumps Step (D) of affixing back grind tape on the protective film formation surface (D) A step of grinding the surface opposite to the bump formation surface of the semiconductor wafer having the bumps while the back grind tape is affixed (E) ) The process of peeling the said back grind tape from the semiconductor wafer provided with the said bump after the said grinding|grinding |
| priorityDate |
2018-10-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |