| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_646018b7183a929bbb6e26dcdb62a8da |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L41-187
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L41-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L41-338
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L41-332 |
| filingDate |
2013-09-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9afdea7473ae2292c7fc0b15c48a8676
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9b92702519b87c4d4bbb308c974a2652
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c45de7433d656d1428eedad1b464b5db
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0db81a86b644cb067b3c1da4a7e96d34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6341fe18db111ab98e4a02218ece79a3 |
| publicationDate |
2015-03-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2015053417-A |
| titleOfInvention |
Method for manufacturing piezoelectric thin film element |
| abstract |
Provided is a manufacturing method capable of finely processing a thin film element using a lead-free alkali niobate-based piezoelectric material at a low cost without deteriorating the characteristics of the piezoelectric material. A method of manufacturing a piezoelectric thin film element according to the present invention includes a lower electrode film forming step of forming a lower electrode film on a substrate, and forming a piezoelectric thin film made of potassium sodium niobate on the lower electrode film. A piezoelectric thin film forming step, an etching mask pattern forming step for forming an etching mask on the piezoelectric thin film so as to have a desired pattern, and a wet using an etching solution containing hydrofluoric acid for the piezoelectric thin film A piezoelectric thin film etching step for performing microfabrication of a desired pattern on the piezoelectric thin film by performing etching, and the etching mask includes a hydrofluoric acid-resistant metal layer in contact with the piezoelectric thin film and the metal layer The hydrofluoric acid-resistant organic composition layer formed in (1) has a laminated structure. [Selection] Figure 1 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2016158178-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016189372-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2016152421-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10186655-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016184687-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10181407-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2016152419-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10211044-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10276777-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10658569-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016189370-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2016152724-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10497855-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016184688-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2016152724-A1 |
| priorityDate |
2013-09-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |