| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_24aca9ded2638ea793d05360dde7a4a0 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02071
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-35
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0209 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N30-097
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N15-15
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N30-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N30-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N30-082
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N30-8542
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-304
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N30-877
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N30-076 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L41-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L41-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L41-187
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L41-332
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-34 |
| filingDate |
2016-03-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f5a2e9639f142e55edae0c515797cba9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7f8b1bd78d4e12aefe1ab72e37d37104
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8a6f79a1e505472f51b296fd9af935ba
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c53b2ccf5bb8353f3855422f40585c56 |
| publicationDate |
2016-10-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2016158178-A1 |
| titleOfInvention |
Method for producing ferroelectric thin film element |
| abstract |
The purpose of the present invention is to ascertain the causes of degradation in long-term reliability testing of a thin film element that uses a lead-free niobate ferroelectric substance. Another purpose of the present invention is to provide a method for producing a ferromagnetic thin film element with which product yield can be improved. This method for producing a ferroelectric thin film element comprises: a bottom electrode film forming step for forming a bottom electrode film on a substrate; a ferroelectric thin film forming step for forming a sodium-potassium niobate thin film on the bottom electrode film; a ferroelectric thin film etching step for performing microfabrication of a desired pattern by etching of the ferroelectric thin film; and a laminated substrate washing step for washing the entire substrate provided with the microfabricated ferroelectric thin film using a specific washing solution, following the ferroelectric thin film etching step. The method is characterized in that the specific washing solution is a mixed solution containing hydrofluoric acid and ammonium fluoride, and that the hydrofluoric acid concentration of the mixed solution is 0.5 M or greater but less than 5 M. |
| priorityDate |
2015-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |