| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_24aca9ded2638ea793d05360dde7a4a0 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02071
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0209
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-35 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-304
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N30-076
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N30-097
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N30-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N15-15
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N30-8542
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N30-082
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N30-877
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N30-088 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L41-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L41-187
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L41-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L41-332 |
| filingDate |
2015-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8a6f79a1e505472f51b296fd9af935ba
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f5a2e9639f142e55edae0c515797cba9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c53b2ccf5bb8353f3855422f40585c56
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7f8b1bd78d4e12aefe1ab72e37d37104 |
| publicationDate |
2016-11-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2016189370-A |
| titleOfInvention |
Method for manufacturing ferroelectric thin film element |
| abstract |
Disclosed is a method for manufacturing a ferroelectric thin film element capable of elucidating a deterioration factor in a long-term reliability test and improving a product yield in a thin film element using a niobic acid-based ferroelectric not containing lead. . A method of manufacturing a ferroelectric thin film element includes a lower electrode film forming step of forming a lower electrode film on a substrate and a ferroelectric film of forming a sodium potassium niobate thin film on the lower electrode. A ferroelectric thin film forming process, a ferroelectric thin film etching process in which the ferroelectric thin film 13 is etched to perform microfabrication of a desired pattern, and a microfabricated ferroelectric after the ferroelectric thin film etching process. And a laminated substrate cleaning step of cleaning the entire substrate 11 including the thin film 13 with a predetermined cleaning solution. The predetermined cleaning solution is a mixed solution containing hydrofluoric acid and ammonium fluoride, and the hydrofluoric acid concentration in the mixed solution is 0.5 M or more and less than 5 M. [Selection] Figure 1 |
| priorityDate |
2015-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |