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filingDate 2011-12-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2014-02-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2014505362-A
titleOfInvention Variable density plasma processing of semiconductor substrates
abstract A method and hardware for generating a variable density plasma is described. For example, in one embodiment, the processing station includes a showerhead that includes a showerhead electrode and a substrate holder that includes a mesa disposed under the showerhead and configured to support the substrate. The substrate holder includes an inner electrode disposed in an inner region of the substrate holder and an outer electrode disposed in an outer region of the substrate holder. The processing station further includes a plasma generator configured to generate a plasma in a plasma region disposed between the showerhead and the substrate holder, and further on an outer portion of the plasma region than an inner portion of the plasma region. A controller configured to control the plasma generator, inner electrode, outer electrode, and showerhead electrode to achieve a high plasma density. [Selection] Figure 1
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017509135-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10707059-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7037894-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017520080-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7360391-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7271443-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2018022685-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017143269-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2020522890-A
priorityDate 2010-12-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 33.