http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014195043-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ed62b7551998e54b35784cdbbb2778d5 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02219 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-402 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02282 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45548 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31 |
| filingDate | 2014-01-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_866f76ddb521283723199fc0fd71f3c8 |
| publicationDate | 2014-10-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2014195043-A |
| titleOfInvention | Substrate processing apparatus, semiconductor device manufacturing method, and gas supply / discharge method |
| abstract | The present invention proposes a technique for making the concentration of a processing gas supplied to a substrate uniform on the surface of the substrate placed on the substrate placing table. A processing chamber for processing a substrate, a mounting surface on which a plurality of substrates are mounted concentrically, the mounting surface facing the ceiling of the processing chamber, and a substrate mounting table. A rotation mechanism that rotates in a direction parallel to the mounting surface; a gas supply unit 255 that is provided in the processing chamber and upstream of the direction in which the substrate mounting table rotates and above the substrate mounting table; The gas supply unit controls the gas exhaust unit 259, the gas supply unit, the gas exhaust unit, and the rotation mechanism which are provided downstream of the substrate mounting table and above the substrate mounting table. And a control for supplying the reaction gas from the gas supply unit and exhausting the reaction gas from the gas exhaust unit to process the substrate when the substrate passes through a predetermined region formed in the processing chamber by the gas exhaust unit. Part. [Selection] Figure 4 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102469407-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20180104765-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017017304-A |
| priorityDate | 2013-02-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID139631 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID415842140 |
Total number of triples: 23.