http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014127649-A
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8a16e2fa556744225f7c2bba36087e7f |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-312 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532 |
filingDate | 2012-12-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_50c6d942b35a79743fa42b53908b57cc |
publicationDate | 2014-07-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-2014127649-A |
titleOfInvention | Manufacturing method of semiconductor device |
abstract | The present invention provides a semiconductor device that reduces residue generated in a pattern opening of a pattern resin film (insulating film) and has excellent adhesion between a rewiring and an insulating layer. Further, it is possible to provide a method for manufacturing a semiconductor device, which can reduce generation of residues in a pattern opening of a pattern resin film and can sufficiently secure adhesion between a rewiring and an insulating layer. A semiconductor device including a substrate having rewiring and an insulating layer containing polybenzoxazole on the rewiring, the surface of the rewiring including a copper oxide layer, and obtained by Auger spectroscopy. A semiconductor device having an average thickness of the copper oxide layer of 3 to 35 nm. [Selection] Figure 1 |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017092152-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2017081922-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102582915-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20190049488-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10748953-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10615213-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11508681-B2 |
priorityDate | 2012-12-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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