| abstract |
A multilayer body having high adhesion reliability of an insulating layer to a rewiring layer, a manufacturing method thereof, and a semiconductor device are provided. A redistribution layer containing copper, An insulating layer containing polyimide or polybenzoxazole, and a multilayer body including at least a copper oxide layer in part or all of the interface between the insulating layer and the rewiring layer, The multilayer body whose average thickness of the said copper oxide layer calculated | required by the infrared reflection absorption method is 18 nm or more and 100 nm or less. [Selection] Figure 1 |