http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013544028-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-50 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-02363 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-04 |
| filingDate | 2011-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2013-12-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2013544028-A |
| titleOfInvention | This application claims the benefit of US Provisional Patent Application No. 61 / 409,064 filed Nov. 1, 2010, entitled “DRYETCHINGMETHODFURRFACETEXFORMATIONIONSILICONWAFER”, which is entitled: The entire contents of which are hereby incorporated by reference. |
| abstract | Disclosed are systems and methods for improving the surface reflectivity of silicon wafers. The system and method improve surface reflectivity by performing a surface oxidation process and a dry etching process to form a textured surface on the surface of the silicon wafer. The surface oxidation treatment can be performed using a dry oxidation plasma treatment. A dry etching process is performed to remove the oxide layer formed in the surface oxidation step, and the silicon layer is etched by oxidation masking. The dry etching process enables blackening of silicon that minimizes or eliminates light reflection or scattering, thereby achieving high energy conversion efficiency. [Selection] Figure 4 |
| priorityDate | 2010-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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