http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013127999-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b55c349b43c3ecba4977fd52cc8f8c67 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-27 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-32225 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-16225 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-83191 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-81191 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-73204 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-60 |
| filingDate | 2011-12-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0014a1119c9a39af1795c49594cafe4e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d558f51235128c0066525fc05b80de3d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_27c26f745089460e45b9056460b32379 |
| publicationDate | 2013-06-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2013127999-A |
| titleOfInvention | Manufacturing method of semiconductor device |
| abstract | PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method capable of manufacturing a highly reliable semiconductor device by suppressing generation of voids at an interface between a semiconductor element and an underfill sheet. The present invention relates to a semiconductor including an adherend, a semiconductor element electrically connected to the adherend, and an underfill material that fills a space between the adherend and the semiconductor element. A method for manufacturing an apparatus, comprising: a preparation step of preparing a sealing sheet comprising a support material and an underfill material laminated on the support material; a circuit surface on which a semiconductor wafer connecting member is formed; and the sealing A thermocompression bonding step of thermocompression bonding the sheet underfill material under a reduced pressure atmosphere of 10,000 Pa or less, a pressure of 0.2 MPa or more, and a thermocompression bonding temperature of 40 ° C. or more; and dicing the semiconductor wafer to form the underfill A dicing step of forming a semiconductor element with a material, and filling the space between the adherend and the semiconductor element with the underfill material and the semiconductor element and the deposition through the connecting member A connection step of electrically connecting the body. [Selection] Figure 2 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11646155-B2 |
| priorityDate | 2011-12-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 161.