| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32137
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-334
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67069 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32091
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05H1-46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32165 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05H1-46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate |
2011-08-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5496771e741cde8523a8b70726cb782f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_45c4d7b72744bfb1c8c2ab5bbe1eb280
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_be5faedd8934d417eef6a7979e746061 |
| publicationDate |
2013-02-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2013033856-A |
| titleOfInvention |
Plasma etching method |
| abstract |
Disclosed is a plasma etching method that suppresses the occurrence of necking and bowing, has a high etching rate, and has a high mask selectivity. A plasma etching method using a plasma etching apparatus having a lower electrode functioning as a mounting table for an object to be processed and an upper electrode disposed to face the lower electrode, the plasma etching method including a fluorocarbon-based gas. A period of the first condition while alternately repeating a first etching step of performing plasma etching using one processing gas and a first condition for turning on high-frequency power for plasma generation and a second condition for turning off the high-frequency power for plasma generation Plasma etching using a second processing gas containing a fluorocarbon-based gas by applying a negative DC voltage to the upper electrode so that the absolute value of the applied voltage is larger during the period of the second condition. The first process gas radical adherence to the object to be treated is determined by the second process gas radical being treated. Adhesion greater than and a second etching step, a plasma etching method for. [Selection] Figure 1 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9412618-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2019102483-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9663858-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20150041752-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9805916-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7220626-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015181143-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2022196369-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20150104043-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9831064-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014179598-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20150051897-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20160033034-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2014171377-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016048771-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20150051879-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2019040959-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016119338-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102358732-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10115567-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2019526169-A |
| priorityDate |
2011-08-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |