| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate |
2005-03-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_729192f45cec017d703ea4cdfc9934f1 |
| publicationDate |
2006-10-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2006278436-A |
| titleOfInvention |
Plasma etching method, plasma etching apparatus, control program, computer recording medium, and recording medium on which processing recipe is recorded |
| abstract |
The present invention provides a plasma etching method and the like that can form a hole having a fine diameter and a high aspect ratio in a good shape. An amorphous carbon film having an opening as a mask is formed on a silicon oxide film. In the first step and the third step, an etching gas containing a fluorocarbon gas having a higher C / F atom ratio than in the second step is used. In the first step, the hole 105 is formed partway through the silicon oxide film 102. In the second step, the hole 105 is formed until the underlying SiN film 101 begins to be exposed or just before it is exposed. In the third step, the hole 105 is formed. Perform over-etching. [Selection] Figure 1 |
| isCitedBy |
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| priorityDate |
2005-03-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |