| abstract |
In a configuration in which electrodes are bonded by bonding two substrates, a bonding strength is ensured while preventing diffusion of electrode materials, thereby improving reliability. A semiconductor device is provided. A first electrode 33 and a first insulating film 35 made of a diffusion preventing material for the first electrode 33 and covering the periphery of the first electrode 33 are included, and the first electrode 33 and the first insulating film 35 are provided. The first substrate 2 on which the bonding surface 41 is formed, the second electrode 67 bonded to the first substrate 2 and bonded to the first electrode 33, and the diffusion preventing material of the second electrode 67 are configured. A second insulating film 69 that covers the periphery of the second electrode 67 is included, and a second substrate 7 in which a bonding surface 71 for the first substrate 2 is configured by the second electrode 67 and the second insulating film 69 is provided. . [Selection] Figure 2 |