| abstract |
The semiconductor device includes a first substrate, an insulating layer, and a first electrode. The first substrate includes a first semiconductor material. The insulating layer has a first surface, a second surface, and a third surface. The first electrode has a fourth surface, a fifth surface, and a sixth surface, and includes a porous first conductive material. The second surface and the fifth surface constitute the same surface. The third surface is opposite to the sixth surface. A distance between the first surface and the first substrate is smaller than a distance between the second surface and the first substrate. The distance between the fourth surface and the first substrate is smaller than the distance between the fifth surface and the first substrate. |