| abstract |
A system and method for performing fast atomic layer etching (ALET), comprising a pulsed plasma source and a reaction chamber. The plasma source has a helical coil electrode, a Faraday shield to be cooled, a counter electrode disposed at the top of the tube, and a gas inlet, and the reaction chamber has a substrate support and a boundary electrode. The method includes placing an etchable substrate in a plasma etch chamber, forming a generation layer on a surface of the substrate, and removing a portion of the generation layer by pulsing the plasma source. And subsequently forming the etched layer by repeating the step of forming the product layer and the step of removing a part of the product layer. |