| abstract |
Provided is an etching method capable of preventing a pattern from being distorted even when the aspect ratio of the pattern to be formed is high. A substrate in which high-frequency power for plasma generation 55 is applied inside a processing chamber 15, high-frequency power for ion attraction 56 is applied to a susceptor 12, and DC power having a negative potential is applied to an upper electrode plate 27. In the processing apparatus 10, when the shape of the pattern 44 formed in the photoresist film 45 on the wafer W is improved, the photoresist film 45 is etched with plasma, and the SiO 2 film 40 is plasmad using the photoresist film 45. In etching, DC power having a negative potential is applied to the upper electrode plate 27, and the high frequency power 55 for plasma generation and the high frequency power 56 for ion attraction are applied in the form of pulse waves to generate high frequency power 55 for plasma generation. And the state where the high frequency power 56 for ion attraction is not applied is created. [Selection] Figure 4 |