http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009246183-A

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filingDate 2008-03-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ec0c7639355d2fe1a5a21a9b76c97373
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publicationDate 2009-10-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2009246183-A
titleOfInvention Plasma etching method and computer-readable storage medium
abstract An etching shape can be controlled arbitrarily and precisely using a capacitively coupled plasma etching apparatus. In this capacitively coupled plasma etching apparatus, a first high frequency for plasma generation and a first high frequency for ion attraction are applied to a susceptor 12 from first and second high frequency power supplies 30 and 32, respectively. The variable DC voltage V DC output from the variable DC power source 74 is applied to the upper electrode 60 via the on / off switch 76 and the filter 82. The software used in the control unit 80 incorporates a program for continuously and variably controlling the DC voltage V DC according to the type, content, and conditions of the etching process. [Selection] Figure 1
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2011119471-A3
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2011108280-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011187583-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017011127-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011199243-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9496150-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9373521-B2
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priorityDate 2008-03-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 30.