Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_24aca9ded2638ea793d05360dde7a4a0 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08F220-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
filingDate |
2010-09-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fcb142bcea5ae883356b016617eda596 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f1108117c8ba75da9b109979a2012b66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0578340d8eda8655050b54e7ae628333 |
publicationDate |
2011-02-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
JP-2011026608-A |
titleOfInvention |
Chemically amplified positive resist composition, (meth) acrylic acid derivative and process for producing the same |
abstract |
Provided is a chemically amplified positive resist composition suitable for ArF excimer laser lithography, having good line edge roughness and capable of further miniaturizing a pattern. A radiation-sensitive composition comprising a resin having a repeating unit of formula (I) and one or more repeating units selected from formulas (II) to (V) and an acid generator. (Y is an alicyclic hydrocarbon group. Z is a divalent hydrocarbon group.) [Selection figure] None |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20140020779-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101704101-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014034667-A |
priorityDate |
2004-04-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |