| Predicate |
Object |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32136
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32137
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32139 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F4-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate |
2008-06-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2010-08-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2010529679-A |
| titleOfInvention |
Method for reducing microloading in etching of high aspect ratio structures |
| abstract |
A method for reducing microloading in etching high aspect ratio structures is provided. A method for etching different aspect ratio configurations into a conductive layer is provided. The method includes depositing on a conductive layer by aspect ratio dependent deposition, etching the structure in the conductive layer by aspect ratio dependent etching of the conductive layer, and repeating the deposition and etching at least once each. And including. [Selection] Figure 1 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I556306-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2013114882-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011211016-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102046193-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20140119030-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2013114882-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015220251-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015534726-A |
| priorityDate |
2007-06-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |