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inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_75a6d5596bf4a2ecc99a416297ccd6df
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publicationDate 2010-07-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2010153581-A
titleOfInvention Semiconductor light emitting device, method for manufacturing semiconductor light emitting device, and lamp
abstract A semiconductor light emitting device having excellent electrode bonding properties, a method for manufacturing the same, and a lamp are provided. A substrate, a laminated semiconductor layer, one electrode formed on an upper surface of a laminated semiconductor layer, and a semiconductor layer exposed surface formed by cutting out a part of the laminated semiconductor layer. The other electrode 108 is formed on the semiconductor light emitting device, and the one electrode 111 includes a transparent electrode 109 having a hole portion where the upper surface 106c of the laminated semiconductor layer 20 is exposed on the bottom surface, and a hole portion. The semiconductor light emitting device 1 includes a bonding layer 110 formed on the bottom surface and the inner wall, and a bonding pad electrode 120 formed so as to cover the bonding layer 110. [Selection] Figure 1
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014216429-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9356196-B2
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015220404-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2018085431-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9608170-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102694085-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013123008-A
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