Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4edd4e526605dbd18b513b4b30d19ab2 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-42 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-38 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32 |
filingDate |
1997-02-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_79d811df06f698b88183639f249d5dcd http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4529d5e835146e67078546c7db7b70c3 |
publicationDate |
1998-09-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
JP-H10242518-A |
titleOfInvention |
Semiconductor light emitting device |
abstract |
(57) [Problem] It is an object of the present invention to provide a semiconductor light emitting device having excellent external quantum efficiency and without characteristic deterioration. According to the present invention, an n-type gallium nitride-based compound semiconductor layer 2 and a p-type gallium nitride-based compound semiconductor layer 3 are laminated on an insulating substrate 1, and light is emitted on the p-type gallium nitride-based compound semiconductor layer 3 side. A gallium nitride-based compound semiconductor light-emitting device serving as an observation surface, wherein the translucent electrode 11 is provided on almost the entire surface of the p-type gallium nitride-based compound semiconductor layer 3 A window 14 provided on a part of the light-transmitting electrode 11 to expose the p-type gallium nitride-based compound semiconductor layer surface 3; and a light-transmitting electrode 11 and a p-type The semiconductor device includes a metal 15 in ohmic contact with the gallium nitride-based compound semiconductor layer 3 and a pad electrode 16 including the metal 15 and in contact with the p-type gallium nitride-based compound semiconductor layer 3. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9577150-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100983825-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9287457-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10833226-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7095059-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9837581-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2014118864-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010153581-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10510929-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-0167524-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8969905-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9076930-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9543474-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2010073539-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10084116-B2 |
priorityDate |
1997-02-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |