http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014216429-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5d7576285d411d00c697e07270d2814a |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1608 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-283 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0485 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-445 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-045 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-45 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-452 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate | 2013-04-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4dfbc053a58e7b22f6fe2d7ecc666843 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c11dda9880a945257a444b005d9bc702 |
| publicationDate | 2014-11-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2014216429-A |
| titleOfInvention | Semiconductor device and method for manufacturing semiconductor device |
| abstract | An object of the present invention is to provide a semiconductor element capable of forming a conductive film having no appearance abnormality on a substrate surface and a method for manufacturing the semiconductor element. The substrate includes a substrate having a (0001) plane and a plurality of conductive films formed on the substrate surface. The plurality of conductive films are formed of a first conductive film 14 having a crystal structure without a plane having symmetry equivalent to an atomic arrangement on the substrate surface of the substrate, and the first conductive film formed above the first conductive film. A second conductive film 16 having a crystal structure having at least one plane having symmetry equivalent to the atomic arrangement on the substrate surface of the substrate, and the second conductive film is polycrystalline with a grain size of 15 μm or less It is characterized by being. [Selection] Figure 1 |
| priorityDate | 2013-04-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 29.