| abstract |
A large-area substrate processing apparatus using a hollow cathode plasma capable of performing a process such as ashing, cleaning, and etching using a plasma on a substrate such as a semiconductor wafer or a glass substrate. . A large area substrate processing apparatus using hollow cathode plasma is provided with a process chamber in which a space for executing a substrate processing process is provided and an exhaust port for exhausting gas is formed, and the process chamber A gas supply unit configured to supply a gas therein; a substrate support unit positioned inside the process chamber to support the substrate; and a plurality of lower recesses positioned inside the process chamber and generating plasma on the bottom surface , A baffle in which a plurality of injection holes are formed at a lower portion of the hollow cathode, and a power supply source for supplying electric power to the hollow cathode. [Selection] Figure 5 |